飞秒激光与准分子激光制作碲掺杂硅探测器  

Fabrication of Tellurium Doped Silicon Detector by Femtosecond Laser and Excimer Laser

作　　者：王熙元[1] 黄永光[1] 刘德伟[1] 朱小宁[1] 王宝军[1] 朱洪亮[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《中国激光》2013年第3期1-4,共4页Chinese Journal of Lasers

基　　金：国家973计划(2012CB934202);北京市自然科学基金(4122080);中国科学院知识创新工程重要方向性项目(Y072051002)资助课题

摘　　要：采用飞秒激光扫描P型单晶硅衬底上的碲单质膜层,实现了碲元素在硅中的N型掺杂,随后利用准分子激光对掺杂样品进行退火处理,制备了碲掺杂硅单晶材料。利用该材料研制出了在室温下具有高响应的碲掺杂硅探测器。在-4V的反向偏压下,光电响应在1000nm处达到0.86A/W,外量子效率大于106.6%;随着反向偏压的增加,光电响应增加,同时截止波长向红外方向拓展,在-8V偏压下,截止波长达到了1235nm;在-16V偏压下,测得响应在1080nm处最高达到3.27A/W。The polished P-type single crystalline silicon wafer deposited with tellurium film is scanned by femtosecond laser. Tellurium is doped in silicon as N-type dopant. The doped layer is irradiated by 248 nm, 30 ns excimer laser for annealing. Single crystalline silicon doped with tellurium is prepared. Silicon photodiode detectors with high response at room temperature are fabricated using the doped single crystalline silicon. At --4 V reverse bias voltage, the response is 0.86 A/W near 1000 nm, and the external quantum efficiency is larger than 106.6 %. By increasing the reverse bias voltage, the response increases, the cutoff wavelength extends to infrared direction. At --8 V reverse bias voltage, the cutoff wavelength extends to 1235 nm. The maximum response is 3.27 A/W at 1080 nm with --16 V reverse bias.

关 键 词：探测器 飞秒激光 准分子激光 碲掺杂 硅探测器 

分 类 号：TN249[电子电信—物理电子学]