内层DES残铜缺陷研究  

Copper residual defects research on innerlayer DES

作　　者：姚小山 李瑞环 彭镜辉 任金磊 

机构地区：[1]东莞生益电子有限公司,广东东莞523039

出　　处：《印制电路信息》2013年第4期77-87,共11页Printed Circuit Information

摘　　要：主要阐述了内层DES(显影、蚀刻、剥离工艺)残铜缺陷的种类,导致DES残铜缺陷的污染源的定位。对不同DES残铜缺陷进行分类研究,首先对显影类残铜缺陷进行了定位性试验验证,确定污染物来源于显影水洗第一缸,原因为水溶性干膜由于溶解度的剧烈变化导致有机物的析出从而导致了后续的显影类残铜和蚀刻类残铜。对于蚀刻类残铜的来源进行了分析定位,同时给出了控制措施。对以上措施的综合性实施后,残铜数据有较前期有明显的改善并能够长时间稳定在优良水平。This paper mainly elaborated the innerlayer DES copper residue defects, which resulted in DES copper residue defects and was the pollution source. We made different DES residual copper defect classification. We first we made the developing type copper residue defects positioning test verification, to determine the pollutant source in developing washed first cylinder, and found the reasons for water soluble dry film as the solubility of the organic led to dramatic changes in precipitation, which led to the subsequent development of residual copper and etching class copper residue. For the etched copper residue sources we analyzed and made positioning, at the same time provided the control measures. After the above measures were comprehensive implemented, copper residue data was relatively improved and long time stable and good level could be maintained.

关 键 词：污染源 水溶性油墨 溶解度突变 显影类残铜 蚀刻类残铜 控制措施 

分 类 号：TN41[电子电信—微电子学与固体电子学]