CO_2激光对HgCdTe焦平面器件热力作用的理论分析  

Theoretical analysis of thermal-stress of CO_2 laser on HgCdTe infrared focal plane

作　　者：雷鹏[1] 聂劲松[1] 李化[1] 卞进田[1] 王玺[1] 

机构地区：[1]脉冲功率激光技术国家重点实验室(电子工程学院),安徽合肥230037

出　　处：《激光与红外》2013年第4期360-365,共6页Laser & Infrared

基　　金：国家"973"计划项目资助

摘　　要：利用有限元分析方法,对CO2连续激光辐照HgCdTe红外焦平面器件的温升效应和热应力效应进行模拟计算,模型的建立加入了In柱对实验的影响。对温度及热应力分布进行分析,结果表明,探测器的温度分布随着激光辐照时间的增加而出现明显的变化。在感光层与In柱阵列的交界面上所产生的热应力对HgCdTe红外焦平面器件造成的损伤有可能先于温升损伤而发生。With the method of finite element analysis,the temperature field and the thermal-stress field of HgCdTe Infrared Focal Plane induced by CO2 laser are simulated.In bump had been taken into consideration during the process.Theoretical analysis indicates that with the increasing of the laser exerting time,the device′s temperature distribution changes obviously.The thermal-stress damage on the interface between HgCdTe and In bump array is likely to happen before thermal damage.

关 键 词：HgCdTe红外焦平面器件 有限元方法 In柱 温升效应 热应力 

分 类 号：TN249[电子电信—物理电子学]