一种二阶曲率补偿CMOS带隙基准  

CMOS bandgap reference with second-order curvature compensation

作　　者：常利平[1] 范国亮[1] 邵丹[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《数字通信》2013年第2期40-42,共3页Digital Communications and Networks

摘　　要：设计了一种采用电流求和技术的亚1V二阶曲率补偿CMOS带隙基准。基于CSMC0.5μm标准CMOS工艺对所设计的带隙基准进行了仿真验证。仿真验证结果显示:所设计的带隙基准获得了0.75V的带隙参考电压;在-25～125℃温度范围内,带隙基准参考电压的温度系数仅为2.548×10-6;当电源电压在2.6～6.2V变化时,带隙基准的输出电压变化仅0.08mV;带隙基准参考电压在10Hz,100Hz,1kHz,100kHz处分别获得-118.07dB,-107dB,-87.23dB,-47dB的电源抑制。This paper presents a COMS sub-1V bandgap reference with second-order curvature compensation based on the current summation technology. The designed bandgap reference has been simulated in a standard CSMC 0.5μm CMOS process. Reflected by the simulation, the designed bandgap reference has achieved a bandgap voltage reference of 0.75 V, a temperature coefficient of 2.548×10-6 in the temperature range from -25 ℃ to 125 ℃, and a deviation of output voltage of 0.08 mV when the power supply voltage is changed from 2.6 V to 6.2 V. Besides, the PSRR （Power Supply Rejection Ratio） of the bandgap reference is at 10 Hz, 100 Hz, 1 kHz, 100 kHz achieves -118.07 dB,-107 dB,-87.23 dB,-47 dB, respectively, using the pre-regulator.

关 键 词：带隙基准源 二阶曲率 CMOS 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]