Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters  

作　　者：杨薇 武翌阳 刘宁炀 刘磊 陈钊 胡晓东 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

出　　处：《Chinese Physics B》2013年第4期482-485,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003);the National Basic Research Program of China (Grant No. 2012CB619304);the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014)

摘　　要：We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron–hole wave function remains at a high level （larger than 90%）. Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron–hole wave function remains at a high level （larger than 90%）. Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.

关 键 词：InN ultra-thin layer spontaneous emission spectra GAIN laser diodes 

分 类 号：TN304[电子电信—物理电子学]