InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration  

作　　者：李新坤 金鹏 梁德春 吴巨 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第4期523-526,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086)

摘　　要：With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.

关 键 词：quantum dot SUBMONOLAYER self-assembled superluminescent diode 

分 类 号：TN312.8[电子电信—物理电子学] TN256