用于SAW器件制造的键合减薄技术  

Bonding and Thinning Technology for SAW Devices

作　　者：程进[1] 刘卫国[1] 刘欢[1] 郭伟进[1] 

机构地区：[1]西安工业大学光电微系统研究所,陕西西安710032

出　　处：《压电与声光》2013年第2期158-161,共4页Piezoelectrics & Acoustooptics

基　　金：总装备部预研基金资助项目(62201070821);陕西省教育厅出国留学人员基金资助项目(608-000030);陕西省教育厅科研计划基金资助项目(12JK0686);西安工业大学校长基金资助项目(XAGDXJJ1002)

摘　　要：铌酸锂(LiNbO3)作为一种压电材料,常被用于声表面波(SAW)器件的压电层,通常LiNbO3晶片厚度为500μm,而实际上压电层的有效利用厚度为λ～2λ(λ为声表面波波长)。为能实现SAW器件的高度集成化,需用键合减薄及抛光技术对LiNbO3进行加工处理。用粒径100nm的SiO2抛光液对减薄后的铌酸锂晶体样品进行化学机械抛光,研究了抛光垫、抛光盘转速、压力及抛光时间对抛光过程的影响。抛光结果表明最佳抛光工艺参数是:采用阻尼布抛光盘,100nm的SiO2抛光液,转速为120r/min,压力为3.9N,抛光时间为40min。经测试样品厚度为80μm,样品的最小粗糙度Ra=0.468nm,Rq=0.593nm(Ra为算术平均粗糙度,Rq为均方根粗糙度)。Piezoelectric material lithium niobate （LiNbO3） can be used as the piezoelectric layer in SAW devices, however the thickness of LiNbO3 crystal is usually 500 μm,actually the valid thickness varies from λ to 2λ. In order to realize the hybrid integration of SAW devices,LiNbO3 wafer need to be processed using the bonding and thinning technique. The sample of LiNbO3 crystal was chemical polished by using silicon dioxide solution of grain size 100 nm. The influence of polishing plate, polishing plate speed, pressure and polishing time on the polishing quality of LiNbO3 crystal were investigated. The optimum parameters were as follows. Polishing should be carried out using a polishing cloth and silicon dioxide solution of grain size 100 nm, a polishing plate speed of 120 r/min, a pres- sure of 3.9 N, and a polishing time of 40min. It was tested that thickness of the sample was 80 μm,optimal rough- ness Ra =0. 468 nm and Rq =0. 593 nm.

关 键 词：铌酸锂(LiNbO3)晶片 键合减薄 声表面波(SAW)器件 抛光 

分 类 号：TN409[电子电信—微电子学与固体电子学]