InAsSb thick epilayers applied to long wavelength photoconductors  

作　　者：Yu-zhu Gao Xiu-ying Gong Guang-hui Wu Yan-bin Feng Takamitsu Makino Hirofumi Kan Tadanobu Koyama Yasuhiro Hayakawa 

机构地区：[1]School of Electronics and Information Engineering, Tongji University [2]Huaxing Infrared Device Co. [3]Hamamatsu Photonics K.K. [4]Research Institute of Electronics, Shizuoka University

出　　处：《International Journal of Minerals,Metallurgy and Materials》2013年第4期393-396,共4页矿物冶金与材料学报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (No. 60777022);the Fundamental Research Funds for the Central Universities

摘　　要：InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.

关 键 词：semiconducting indium compounds thick epilayers long wavelength PHOTOCONDUCTORS DETECTIVITY 

分 类 号：TN215[电子电信—物理电子学]