大气等离子体加工熔石英技术研究  

Research on atmospheric pressure plasma processing technology of fused silicon

作　　者：王东方[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《陕西理工学院学报（自然科学版）》2013年第2期1-5,11,共6页Journal of Shananxi University of Technology:Natural Science Edition

基　　金：国家自然科学基金资助项目(50775055);国家"863"重点项目(2008AA042503)

摘　　要：为了高效获得无亚表面损伤的超光滑光学表面,提出了大气等离子体加工技术。它的工作原理是在大气压环境下通过等离子体中的活性粒子与工件表面原子发生化学反应实现材料去除,可以避免传统光学加工方法中机械接触应力带来的亚表面损伤问题。本文基于光谱定量分析原理和红外测温原理,研究反应气体含量、输入功率、加工距离和加工时间等因素对光学材料熔石英去除率的影响规律。实验结果表明,当CF4的含量为3.5%时,熔石英的去除深度每分钟最高达3.5μm,远高于目前的传统抛光工艺效率;加入适量的O2能进一步提高去除率;去除率与输入功率在一定范围内呈线性关系,且不随加工时间变化。In order to improve the processing efficiency of fused silicon, and get the non-affected layer, non-second damage optical surface, atmospheric pressure plasma processing （APPP） is established and its working principle is by chemical reaction between active radicals excited by plasma and work piece surface at- oms to remove work piece materials, avoiding the problems that non-second damage surface by mechanical force in the traditional processing. Based on the spectral quantitative analysis and infrared temperature meas- urement theory, the rule of processing factors such as reactive gas content, input power and process time upon the material removal rate is researched. By using the Nano indentation technology the effect of component sur- face of this processing technology is also studied. Experimental results indicate that ： when the content of CF4 is 3.5% ,the material removal depth is 3.5p.m per minute,which is the higher than the processing efficiency of traditional polishing;Adding some 02 can improve the material rate, Input power and the removal rate is a line- ar relationship in a certain range, and the removal rate do not change over the processing time：

关 键 词：大气等离子体 去除率 熔石英 

分 类 号：TH162[机械工程—机械制造及自动化]