聚噻吩衍生物的合成及光电性质研究  

Preparation and photoelectronic properties of polythiophenes

作　　者：乌海燕[1] 刘福德[1] 王娟[1] 周勇[1] 

机构地区：[1]天津理工大学化学化工学院,天津300384

出　　处：《天津工业大学学报》2013年第2期54-56,共3页Journal of Tiangong University

基　　金：国家自然科学基金资助项目(21176193)

摘　　要：通过化学氧化聚合法合成了3种聚噻吩衍生物,并通过测定紫外-可见吸收光谱、荧光光谱、光致发光光谱以及循环伏安曲线对3种聚合物的光电性质进行了表征,确定其光学性质、带隙及HOMO/LUMO轨道能量.结果表明,在噻吩环3-位引入长链取代基可提高聚合物最大吸收波长λmax,降低聚合物带隙.Three kinds of polythiophenes are prepared by chemical oxidative polymerization. The UV-Vis spectra, fluorescence spectra, PL and CV spectra of the three polymers have been determined, the photoelectric properties, band gag and HOMO/LUMO orbital energy of them are investigated. It is concluded that a long chain alkyl group at 3 - position of thiophene ring can effectively increase λmax and decrease band gap of polythiophene.

关 键 词：聚噻吩 光电性质 禁带宽度 化学氧化法 

分 类 号：TQ031.2[化学工程]