日本半导体光电子器件研究与开发的新进展  

Recent Progress in Research and Development on Semiconductor Optoelectronic Devices in Japan

作　　者：余金中[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《半导体光电》2000年第5期305-309,共5页Semiconductor Optoelectronics

摘　　要：根据对日本九所研究所和大学的实地考察 ,综述了这些研究机构在光电子器件方面的研究和开发进展 ,这些光电器件主要包括多波长光源和波长可选择光源、电吸收调制器与分布反馈激光器的集成、泵浦用大功率激光器、大功率GaN激光器和平面光波回路等。同时 ,介绍了日本半导体光电产业的发展现状和趋势。The main progress in research and development of semiconductor optoelectronic de vices in Japan is reviewed according to our visit to nine Japanese research inst itutes and universities recently.Development of such devices is described as mul tiple-wavelength and wavelength selectable optical sources,integrated DFB lasers ,high-power pumping laser diodes,blue laser diodes,and planar lightwave circuits ,etc.The prospects of these devices are forecasted.

关 键 词：半导体 激光器 平面光波回路 光电子器件 

分 类 号：TN36[电子电信—物理电子学]