磁场退火温度对Ni_(80)Fe_(20)薄膜磁畴结构的影响研究  

Effects of magnetic field annealing temperature on magnetic domain structure of Ni_(80)Fe_(20) thin films

作　　者：陈森[1] 张师平[1] 吴平[1] 徐建[1] 向勇[1] 

机构地区：[1]北京科技大学数理学院,北京100083

出　　处：《实验技术与管理》2013年第3期56-59,共4页Experimental Technology and Management

基　　金：北京科技大学研究型教学示范课建设项目(JY2011SFK18);北京科技大学教育教学改革研究项目(重点)(JG2011Z14)

摘　　要：利用电子束真空蒸发方法制备了厚度100nm的Ni80Fe20薄膜,研究了磁场退火温度对薄膜磁畴结构的影响。利用振动样品磁强计测量了磁滞回线,利用磁力显微镜观察了薄膜的表面形貌和磁畴结构。结果表明:磁畴结构为明显的条状畴,磁畴宽度最大值约为860nm;随着磁场退火温度的升高,磁畴取向趋于沿垂直膜面方向,退火温度为600℃时,沿着主畴的畴壁形成了细小的横向细畴结构。Ni80Fe20 thin films（thickness of 100 nm） were prepared by vacuum electron-beam deposition method,and effects of magnetic field annealing temperature on the magnetic domain structure of Ni80Fe20 thin films were investigated.The magnetic hysteresis loops of Ni80Fe20 thin films were measured by vibrating sample magnetometer（VSM）,Surface morphology and magnetic domains structure were observed by magnetic force microscope（MFM）.The experiment results show that the magnetic domain structure is obvious stripe-shaped domains,and the maximum width value of magnetic domains is about 860 nm;with annealing temperatures increase,the domain is oriented along the vertical direction to the thin films surface.Small transverse domain structure is formed along domain walls of the main domain when the annealing temperature is 600 ℃.

关 键 词：Ni80Fe20薄膜 磁畴 磁场退火 

分 类 号：O484.4[理学—固体物理]