金属氧化物半导体气敏传感器  

Metal Oxide Semiconductor Gas Sensor

作　　者：傅盼盼 杨志学[1] 

机构地区：[1]浙江工业大学化学工程与材料学院,浙江杭州310014

出　　处：《化工时刊》2013年第3期45-47,共3页Chemical Industry Times

摘　　要：主要介绍半导体气敏传感器的类型,金属氧化物半导体气敏传感器气敏原理和特性参数,了解贵金属的掺杂效应,即通过添加贵金属的方法,改善传感器的灵敏度和选择性,综述了金属氧化物半导体气敏传感器添加贵金属改性的研究进展。The types of semiconductor gas sensors, the gas sensing mechanism and Characteristic parameters of metal oxide semiconductor gas sensor were introduced. The precious metal doping effects were described. The sensi- tivity and selectivity of the sensor were improved by adding precious metals. The research progress of modify metal ox- ide semiconductor gas sensor by adding precious metals was summaried.

关 键 词：气敏机理 特性参数 贵金属 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]