窄禁带Hg_(0.79)Cd_(0.21)Te的红外光致发光  

INFRARED PHOTOLUMINESCENCE FROM NARROW GAP Hg_(0.79)Cd_(0.21)Te

作　　者：常勇[1] 王晓光[1] 唐文国[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2000年第3期174-176,共3页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金!(编号 61 8760 4 2和 6982 30 0 2 )资助项目&&

摘　　要：对常规傅里叶变换发光测量方法进行改进 ,引入双调制技术 ,消除了室温背景黑体辐射在 4μm至 5μm以上区域对光致发光测量带来的严重干扰 ,在 10μm红外波段得到了组分 x=0 .2 1窄禁带 Hg Cd Te的光致发光光谱 ,对光谱的主要结构也进行了指认 ,发现存在于这种材料中的 4me V的杂质能级 ,其来源是材料中的浅杂质 .The double modulation technique with an attached high frequency modulation and lock in measuring method added to the normal Michelson modulation was induced in normal Fourier transform infrared luminescence measurements, to eliminate the huge influences from the room temperature background blackbody emission. The photoluminescence spectra in the range of 10μm from narrow gap Hg 0.79 Cd 0.21 Te bulk sample, which consist of the luminescence from the radiative recombinations of band to band and shallow impurity level to band were obtained. The shallow impurity level of 4meV was hereby determined.

关 键 词：红外光致发光 窄禁带半导体 HGCDTE 

分 类 号：TN304.26[电子电信—物理电子学]