红外椭圆偏振光谱研究Ga_xIn_(1-x)As_ySb_(1-y)材料的禁带宽度  

DETERMINING THE BAND GAP OF Ga_xIn_(1-x)As_ySb_(1-y) QUATERNARY ALLOY BY INFRARED ELLIPSOMETRIC SPECTROSCOPY

作　　者：梁帮立[1,2] 夏冠群[1] 黄志明[3] 范叔平[2] 褚君浩[3] 

机构地区：[1]中国科学院上海冶金研究所 [2]苏州大学物理系,苏州215006 [3]中国科学院红外物理国家实验室

出　　处：《红外与毫米波学报》2000年第3期188-190,共3页Journal of Infrared and Millimeter Waves

基　　金：国家 8 63高技术研究发展计划!(编号 863- 71 5- 0 1 52 )资助项目&&

摘　　要：采用红外椭圆偏振光谱研究了与 Ga Sb衬底近晶格匹配的不同组分 Gax In1 - x Asy Sb1 - y样品位于禁带宽度能量位置之上、附近和之下的室温折射率光谱 .根据禁带宽度能量位置附近的折射率增强效应确定了 Gax In1 - x Asy Sb1 - y样品的禁带宽度 ,并发现在组分 x=0 .2～ 0 .3之间禁带宽度随组分 x近似于线性变化 .The refractive index spectra of Ga x In 1- x As y Sb 1- y MBE epitaxy layers above, near and below the band gap were studied by room temperature infrared ellipsometric spectroscopy with different compositions. The band gaps were determined by refractive enhancement. It was found that the band gap energy changes approximately linearly as a function of composition between x =0.2~0.3.

关 键 词：半导体材料 红外椭圆偏振光谱 禁带宽度 

分 类 号：TN304.23[电子电信—物理电子学]