Effect of oxygen pressure on electrical transport properties for(110) oriented La_(2/3)Sr_(1/3)MnO_3 films directly deposited on silicon  

作　　者：李廷先 李扩社 于敦波 张飞鹏 张铭 于凤军 

机构地区：[1]College of Physics and Electrical Engineering,Anyang Normal University [2]National Engineering Research Center for Rare earth Materials,General Research Institute for Nonferrous Metals,Grirem Advanced Materials Co.,Ltd. [3]Department of Mathematics and Physics,Henan University of Urban Construction [4]College of Materials Science and Engineering,Beijing University of Technology

出　　处：《Journal of Rare Earths》2013年第4期376-380,共5页稀土学报（英文版）

基　　金：supported by National Natural Science Foundation of China (51002013,11174201);Natural Science Foundation of Beijing Municipal (2122007);Science and Technology Research Projects of Education Department of Henan province (13B430895)

摘　　要：La2/3Sr1/3MnO3 films with （110） preferred orientation were deposited on Si （100） substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented （110） preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The （110） oriented film presented higher metal-insulator transition temperature, and the lower resis- tivity than that of the samples without preferred orientation.La2/3Sr1/3MnO3 films with （110） preferred orientation were deposited on Si （100） substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented （110） preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The （110） oriented film presented higher metal-insulator transition temperature, and the lower resis- tivity than that of the samples without preferred orientation.

关 键 词：colossal magnetoresistive film LSMO pulsed laser deposition electrical transport rare earths 

分 类 号：O613.72[理学—无机化学]