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作 者:ZHANG JiaQi HUANG KeKe SI WenZhe WU XiaoFeng CHENG Gang FENG ShouHua
出 处:《Science China Chemistry》2013年第5期583-587,共5页中国科学(化学英文版)
基 金:supported by the National Natural Science Foundation of China (No. 90922034 and No. 21131002);Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110061130005)
摘 要:A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 (LCKMO)/zinc oxide (ZnO) heterojunction bilayers grown on ITO substrate by pulsed laser deposition (PLD) at relative low growth temperature. The heterostructure ITO/LCKMO/ZnO/A1 exhibits reproducible rectifying characteristics and light cur- rent under continuous laser irradiation of 2 = 325 nm. We report here the influence of LCKMO/ZnO bilayers' thickness on the electrical and photoelectric properties of the heterostructure at room temperature. The power conversion efficiency (PCE) is achieved when the LCKMO and ZnO layers are thin enough or the full space charge layer is sufficient. We obtained the maximum value of PCE of 0.0145% when the thicknesses of LCKMO and ZnO layers are 25 and 150 nm, respectively. The open circuit voltage is 0.04 V under this condition due to the internal photoemission.A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K 0.09MnO3 (LCKMO)/zinc oxide (ZnO) heterojunction bilayers grown on ITO substrate by pulsed laser deposition (PLD) at relative low growth temperature. The heterostructure ITO/LCKMO/ZnO/Al exhibits reproducible rectifying characteristics and light current under continuous laser irradiation of = 325 nm. We report here the influence of LCKMO/ZnO bilayers' thickness on the electrical and photoelectric properties of the heterostructure at room temperature. The power conversion efficiency (PCE) is achieved when the LCKMO and ZnO layers are thin enough or the full space charge layer is sufficient. We obtained the maximum value of PCE of 0.0145% when the thicknesses of LCKMO and ZnO layers are 25 and 150 nm, respectively. The open circuit voltage is 0.04 V under this condition due to the internal photoemission.
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