硫化温度对铜锌锡硫薄膜特性的影响  

The Influence of Sulfurization Temperature on the Properties of Cu_2ZnSnS_4 Thin Films

作　　者：谢敏[1] 庄大明[1] 刘江[1] 郭力[1] 宋军[1] 

机构地区：[1]清华大学材料学院先进成形制造教育部重点实验室,北京100084

出　　处：《材料研究学报》2013年第2期126-130,共5页Chinese Journal of Materials Research

基　　金：清华大学自主研究计划2010Z08113资助项目~~

摘　　要：采用预制膜硫化法制备铜锌锡硫(CZTS)薄膜,分别在350,400,450,500,550℃进行硫化,研究了硫化温度对薄膜特性的影响。结果表明:硫化温度低于400℃时硫化反应基本上不发生,主要发生Cu6Sn5和Cu5Zn8两相中元素相互扩散的合金化过程,只有少量硫化物Sn3S4和ZnS生成;硫化温度为450℃时,合金相消失,硫化后的薄膜同时含有CZTS和SnS;硫化温度为500℃时薄膜的主要组成相为CZTS,其晶粒尺寸达2μm,但表面粗糙;硫化温度为550℃薄膜中CZTS晶粒尺寸约为2μm,表面平整。The CZTS thin films were fabricated by sulfurization of sputtered CZT precursors, vulcanized at 350, 400, 450, 500 and 550 ℃ respectively, characterized through the analyses of XRD, XRF, SEM and Raman spectrum, and the influences of sulfurization temperature on the compositional and structural properties of CZTS thin films were investigated. The results show that the sulfurization process did not occur in the films sulfurized at the temperature of less than 400 ℃. Instead, the main change in the films was the inter-diffusion of the alloying elements, accompanying with the appearance of tiny amount of SnsS, and ZnS. CZTS appeared in films sulfurized at 450 ℃ while a quantity of SnS also existed in the films. For films sulfurized at 500 ℃, principal phase is CZTS with grain size of almost 2 pro, yet with a high surface roughness at the same time. For films sulfurized at 550 ℃, CZTS thin films with grain size around 2 pm and smooth surface were obtained.

关 键 词：无机非金属材料 太阳电池 铜锌锡硫 溅射 硫化 

分 类 号：TM615[电气工程—电力系统及自动化]