MOCVD法在MgO(100)衬底上生长m面ZnMgO薄膜  

M-plane ZnMgO Thin Films Prepared on MgO(100) Substrates by MOCVD

作　　者：张亚琳[1] 黄靖云[1] 吴科伟[1] 卢洋藩[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2013年第2期195-198,207,共5页Journal of Materials Science and Engineering

摘　　要：本文采用金属有机化学气相沉积(MOCVD)法在MgO(100)衬底上成功生长了非极性的m面(1010)ZnMgO薄膜。研究了衬底温度对ZnMgO薄膜生长取向的影响。X射线衍射(XRD)分析结果表明当衬底温度为400℃时可以获得单一取向的m面ZnMgO薄膜。采用扫描电子显微镜(SEM)观察到ZnMgO薄膜表面平整,由条纹状结构组成。透射电子显微镜(TEM)分析进一步证明ZnMgO为具有m面取向的单晶薄膜。X射线光电子能谱(XPS)定量分析表明ZnMgO薄膜中Mg含量为3at.%。Nonpolar m-plane ZnMgO thin films were successfully prepared by metal organic chemical vapor deposition on MgO （100） substrates. Effect of substrate temperature on the growth orientation of ZnMgO thin film was investigated. X-ray diffraction （XRD） results indicated that pure m-plane ZnMgO thin film is formed at 400℃. The surface and cross section were observed under scanning electron microscopy （SEM）. The surface of ZnMgO thin film is smooth consisting of stripe-type structure. Transmission electron microscopy （TEM） images suggested that the ZnMgO thin film deposited at 400℃ is of single-crystal withmplane orientation. Mg content in the ZnMgO thin film was 3 at. % evaluated by X-ray photoelectron spectroscopy （XPS） investigation.

关 键 词：ZNMGO m面 金属有机化学气相沉积(MOCVD) 

分 类 号：TN304.2[电子电信—物理电子学]