Ga掺杂对La_(0.67)Ca_(0.33)MnO_3磁电阻的提高  

ENHANCEMENT OF MAGNETORESISTANCE BY Ga DOPPING IN La_(0.67) Ca_(0.33) MnO_3

作　　者：任清褒[1] 孙勇[1] 

机构地区：[1]中国科学技术大学结构分析开放实验室

出　　处：《低温物理学报》2000年第1期8-12,共5页Low Temperature Physical Letters

摘　　要：本文研究了Ga部分替代Mn位对巨磁阻材料La0.67Ca0.33MnO3的磁性和输运性质的影响.实验结果表明Ga掺杂破坏了双交换作用,使电阻率上升而磁有序转变推移到低温.但是,Ga掺杂使磁电阻效应显著提高。The effects of Ga Doping on Mn site in LaCaMnO have been studied by electrical resistivity, magnetoresistance and magnetization measurements. The experimental results suggest that Ga doping destory the double exchange interaction so that the resistivity rises and the Curie temperature decreases to lower temperature. However, it was found that the magnetoresistance is greatly enhanced by Ga doping, which implies that Mn site element substitution could be an effective way for promoting magnetoresistance effect.

关 键 词：钙 掺杂 锰氧化物 磁电阻 巨磁阻材料 

分 类 号：TM27[一般工业技术—材料科学与工程]