Discharge Simulation and Fabrication Process of an Aluminum Electrode and an Alumina Layer in AC-PDP  

作　　者：刘启发 丁桂甫 严群 刘畅 王艳 

机构地区：[1]National Key Laboratory of Science and Technology on Nano/Micro Fabrication Technology, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University [2]Sichuan Changhong Electric Co. Ltd.

出　　处：《Plasma Science and Technology》2013年第4期368-375,共8页等离子体科学和技术（英文版）

基　　金：supported by Research Fund for the Doctoral Program of Higher Education of China (20120073110061)

摘　　要：A larger space PDP cell with patterned aluminum as the addressing electrode and alumina as the dielectric layer was proposed. The aluminum electrode and the alumina dielectric layer formed on the aluminum electrode were prepared separately by magnetron sputtering and anodic oxidation for plasma display panel. The properties of the aluminum electrode and the alumina dielectric layer were tested and can meet the demand of PDP application. The resistivity of the aluminum electrode is about 5×10^-8 Ω.m, the voltage withstanding of the alumina dielectric layer exceeds 100 V/μm and the relative permittivity is about 3.5 at 1 MHz. With this structure, the manufacturing cost of PDP could be cut and the addressing discharge formative delay is reduced by 0.67%, which is proved by PIC-MCC simulation.A larger space PDP cell with patterned aluminum as the addressing electrode and alumina as the dielectric layer was proposed. The aluminum electrode and the alumina dielectric layer formed on the aluminum electrode were prepared separately by magnetron sputtering and anodic oxidation for plasma display panel. The properties of the aluminum electrode and the alumina dielectric layer were tested and can meet the demand of PDP application. The resistivity of the aluminum electrode is about 5×10^-8 Ω.m, the voltage withstanding of the alumina dielectric layer exceeds 100 V/μm and the relative permittivity is about 3.5 at 1 MHz. With this structure, the manufacturing cost of PDP could be cut and the addressing discharge formative delay is reduced by 0.67%, which is proved by PIC-MCC simulation.

关 键 词：PDP addressing discharge formative delay manufacturing cost PIC-MCC 

分 类 号：O53[理学—等离子体物理] TN873[理学—物理]