多结硅基薄膜太阳电池的带隙匹配  

BANDGAP MATCHING OF MULTIJUNCTION SILICON-BASED THIN FILM SOLAR CELLS

作　　者：张鹤[1] 张晓丹[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《太阳能学报》2013年第4期621-627,共7页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2007AA05Z436;2009AA050602);天津科技支撑项目(08ZCKFGX03500);国家重点基础研究发展(973)规划(2011CBA00706;2011CBA00707);国家自然科学基金(60976051);科技部国际合作重点项目(2009DFA62580);教育部新世纪人才计划(NCET-08-0295)

摘　　要：在理想PIN结电池基础上估测了多结硅基薄膜电池的最佳带隙匹配及其效率极限,同时针对硅基薄膜电池实际效率损失进行一定深入分析。计算结果表明:非晶硅/微晶硅叠层电池的带隙与最佳带隙匹配最为吻合,效率极限可达33.4%。努力开发更宽带隙和更窄带隙的硅基薄膜本征材料对三结和四结电池的发展具有实际意义。Fhe muhijunction structure is widely applied in silicon-based thin film solar cells to achieve a high con-version efficiency. Based on an ideal p-i-n junction model, the best bandgap matching and its corresponding effi-ciency limits for the muhijunction cells was estimated, considering all the efficiency loss in silicon-based thin film solar cells. The results implied that the amorphous silicon/microcrystalline silicon tandem cell agree with the best bandgap matching with a 33.4% efficiency limit. And the silicon-based materials with wider and narrow bandgaps should be developed to fit the triple and quadra-junction cells.

关 键 词：硅基薄膜 多结电池 效率极限 带隙匹配 电流匹配 

分 类 号：TM914.42[电气工程—电力电子与电力传动]