A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor  

作　　者：孙亚宾 付军 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 余永涛 马英起 封国强 韩建伟 

机构地区：[1]Institute of Microelectronics,Tsinghua University [2]Tsinghua National Laboratory for Information Science and Technology [3]National Space Science Center,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第5期49-54,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60976013)

摘　　要：A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

关 键 词：single event transient （SET） pulsed laser charge collection SiGe heterojunction bipolar transistor（HBT） 

分 类 号：TN322.8[电子电信—物理电子学] TN241