Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition  

作　　者：刘波 张森 尹甲运 张雄文 敦少博 冯志红 蔡树军 

机构地区：[1]Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute [2]School of Physical and Mathematical Sciences,Nanyang Technology University

出　　处：《Chinese Physics B》2013年第5期449-452,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60876009)

摘　　要：The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.

关 键 词：AIN epilayer high-temperature （HT） buffer atomic force microscopy （AFM） DISLOCATION 

分 类 号：TN304[电子电信—物理电子学]