High sensitivity Hall devices with AlSb/InAs quantum well structures  

作　　者：张杨 张雨溦 王成艳 关敏 崔利杰 李弋洋 王宝强 朱战平 曾一平 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Chinese Academy of Sciences [2]Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第5期453-455,共3页中国物理B（英文版）

基　　金：Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T04);the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049);the Beijing Natural Science Foundation, China (Grant No. 2112040);the Beijing Nova Program, China (Grant No. 2010B056)

摘　　要：A1Sb/InAs quantum well （QW） structures and InAs films on GaAs （001） substrates were grown by molecular beam epitaxy （MBE）. We investigated the dependence of electron mobility and two-dimensional electron gas （2DEG） concen- tration on the thickness of an InAs Channel. It is found that electron mobility as high as 19050 cm2 · V-1 · s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the A1Sb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.A1Sb/InAs quantum well （QW） structures and InAs films on GaAs （001） substrates were grown by molecular beam epitaxy （MBE）. We investigated the dependence of electron mobility and two-dimensional electron gas （2DEG） concen- tration on the thickness of an InAs Channel. It is found that electron mobility as high as 19050 cm2 · V-1 · s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the A1Sb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

关 键 词：antimonide semiconductors quantum well molecular beam epitaxy 

分 类 号：TN382[电子电信—物理电子学]