Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers  

作　　者：任胜东 李斌成 高丽峰 王谦 

机构地区：[1]Institute of Optics and Electronics,Chinese Academy of Sciences [2]University of the Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第5期462-466,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090)

摘　　要：A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.

关 键 词：photocarrier radiometry ion implantation effective lifetime silicon 

分 类 号：TN306[电子电信—物理电子学]