Strong perpendicular magnetic anisotropy in Co_2FeAl_(0.5)Si_(0.5) film sandwiched by MgO layers  

作　　者：王圣 李晓其 白丽娟 徐晓光 苗君 姜勇 

机构地区：[1]State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering,University of Science and Technology Beijing

出　　处：《Chinese Physics B》2013年第5期488-491,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 50831002, 51271020, 50971025, 51071022, and 11174031);the National Basic Research Program of China (Grant No. 2012CB932702);PCSIRT, Beijing Nova Program, China (Grant No. 2011031);the Beijing Municipal Natural Science Foundation, China (Grant No. 2102032);the Fundamental Research Funds for the Central Universities, China

摘　　要：Co2FeA10.5Si0.5 （CFAS）-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy （PMA） with the magnetic anisotropy energy density Ku ≈2.5x106 erg/cm3 （1 erg = 10-7 J） and the coercivity He = 363 Oe （10e = 79.9775 A.m-1） has been achieved in the Si/SiO2/MgO （1.5 nm）/CFAS （2.5 nm）/MgO （0.8 nm）/Pt （5 nm） film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.Co2FeA10.5Si0.5 （CFAS）-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy （PMA） with the magnetic anisotropy energy density Ku ≈2.5x106 erg/cm3 （1 erg = 10-7 J） and the coercivity He = 363 Oe （10e = 79.9775 A.m-1） has been achieved in the Si/SiO2/MgO （1.5 nm）/CFAS （2.5 nm）/MgO （0.8 nm）/Pt （5 nm） film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.

关 键 词：half-metallic ferromagnets MgO layers perpendicular magnetic anisotropy 

分 类 号：O484.43[理学—固体物理]