多管下降炉生长Bi_4Ge_3O_(12)单晶的温场与界面  

The Thermal Field and Interface of Bi_4G e_3O_(12) Single Crystal’s Multi-heater Bridgman Growth

作　　者：韩尧[1] 胡少勤[1] 史榜春[1] 

机构地区：[1]四川压电与声光技术研究所,重庆400060

出　　处：《压电与声光》2000年第5期329-331,共3页Piezoelectrics & Acoustooptics

摘　　要：采用 2种不同的炉膛结构设计。温场试验表明温场条件同炉膛结构密切相关。克服了各管的温场差异 ,获得良好的界面热环境。经过多次晶体生长试验 ,得到了理想的微凸界面 ,生长出高质量的 Bi4Ge3 O1 2 单晶。T wo different furnace structurs are desig ned.Thermal fields are proved to be clos ely related to the furnace structures.Th e thermal difference of each heater has been balanced and an ideal thermal envir onment of interface is achieved.Series o f experiments were performed.The interfa ces are convex during growth and high qu ality Bi 4Ge 3O 12 single crystals hav e been produced under this thermal condi tion.

关 键 词：多管下降炉 温场 凸界面 单晶 晶体生长 

分 类 号：O782[理学—晶体学]