808nm高功率量子阱远结激光器及其电噪声特性  

808nm high－power quantum well remote junction semiconductor laser and its electrical noise character

作　　者：胡贵军[1] 石家纬[1] 张素梅[1] 齐丽云[1] 李红岩[1] 张锋刚 

机构地区：[1]吉林大学电子工程系,长春130023

出　　处：《功能材料与器件学报》2000年第3期279-281,共3页Journal of Functional Materials and Devices

基　　金：吉林省科委基金!(19990526-1)

摘　　要：介绍了808nm高功率量子阱远结半导体激光器的结构和器件特性，测试了器件的低频电噪声，讨论了噪声与频率、注入电流及器件质量的关系。结果表明，808nm高功率量子阱远结半导体激光器的阈值电流在老化初期随时间的延续而降低，其噪声在低频段主要为1/f噪声，且在阈值附近有最大值，器件噪声与器件质量有一定的相关性。The structure and character of high－ power quantum well remote junction semiconductor lasers are presented. The electrical noise of the devices is measured, the dependence of the noise on the frequency as well as on bias current is discussed. The results indicate that the threshold current of 808nm high power quantum well remote junction semiconductor laser decreases during early aging time, its electrical noise is mainly 1/f noise in low frequency and has maximum value around the threshold, and there is a relation between the noise and device quality.

关 键 词：半导体激光器 高功率 远结 量子阱 电噪声 

分 类 号：TN365[电子电信—物理电子学] TN248.4