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机构地区:[1]Faculty of Materials Science and Chemical Engineering, Ningbo University [2]Laboratory of Infrared Materials and Devices, Ningbo University [3]Faculty of Information Science and Engineering, Ningbo University
出 处:《Chinese Optics Letters》2013年第4期56-59,共4页中国光学快报(英文版)
基 金:supported by the National Natural Science Foundation of China(No.61205181);Zhejiang Provincial Natural Science Foundation of China(No.LQ12E02003);the Natural Science Foundation of Ningbo City(No.2012A610122);the Scientific Research Fund of Zhejiang Provincial Education Department(No.Y201120457);K.C.Wong Magna Fund in Ningbo University
摘 要:Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband near- infrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1100 to 1650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi22- dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass,Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband near- infrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1100 to 1650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi22- dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass,
关 键 词:IR Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses
分 类 号:TN21[电子电信—物理电子学]
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