Structural and magnetic properties of Yb-implanted GaN  

作　　者：尹春海 刘超 陶东言 曾一平 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第5期16-19,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60876004)

摘　　要：N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction （HRXRD）, Raman scattering and with a superconducting quan- tum interference device （SQUID）. No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN：Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction （HRXRD）, Raman scattering and with a superconducting quan- tum interference device （SQUID）. No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN：Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.

关 键 词：diluted magnetic semiconductors （DMS） room temperature ferromagnetism ion implantation magnetic anisotropy 

分 类 号：TN304[电子电信—物理电子学]