Kirk effect and suppression for 20 V planar active-gap LDMOS  

作　　者：聂卫东 易法友 于宗光 

机构地区：[1]School of Information,Jiangnan University [2]Wuxi Crystal Source Electronics Co.,Ltd.

出　　处：《Journal of Semiconductors》2013年第5期59-63,共5页半导体学报（英文版）

摘　　要：For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift （the drain n＋ diffusion to gate spacing） which are related to the Kirk effect is discussed. The trade-offs between Rdson.Area, breakdown voltage Vbd and the electrical safe operating area （e-SOA） performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldria are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson.Area parameter.For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift （the drain n＋ diffusion to gate spacing） which are related to the Kirk effect is discussed. The trade-offs between Rdson.Area, breakdown voltage Vbd and the electrical safe operating area （e-SOA） performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldria are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson.Area parameter.

关 键 词：planar active-gap LDMOS sectional channel n-drift length L-drift n-drift concentration Kirk effect electrical safe operating area 

分 类 号：TN386.1[电子电信—物理电子学]