Improvement of carrier distribution in dual wavelength light-emitting diodes  

作　　者：司朝 魏同波 张宁 马骏 王军喜 李晋闽 

机构地区：[1]Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第5期87-89,共3页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61274040)

摘　　要：The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.

关 键 词：LED dual wavelength quantum barrier holes injection carrier distribution 

分 类 号：TN312.8[电子电信—物理电子学] TN248.1