Impacts of NBTI/PBTI on power gated SRAM  

作　　者：黄平 邢座程 

机构地区：[1]School of Computer,National University of Defense Technology [2]Computational Aerodynamics Institute,China Aerodynamics Research and Development Center

出　　处：《Journal of Central South University》2013年第5期1298-1306,共9页中南大学学报（英文版）

基　　金：Projects(60873016, 61170083) supported by the National Natural Science Foundation of China;Project(20114307110001) supported by the Doctoral Fund of Ministry of Education of China

摘　　要：A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work.A signal probability and activity probability （SPAP） model was proposed firstly, to estimate the impacts of the negative bias temperature instability （NBTI） and positive bias temperature instability （PBTI） on power gated static random access memory （SRAM）. The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work.

关 键 词：negative bias temperature instability （NBTI） positive bias temperature instability （PBTI） static random access memory（SRAM） power gating 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN386[自动化与计算机技术—计算机科学与技术]