Si(CH_3)_4的MPD与Si原子的双光子共振三光子电离  

Multiphoton dissociation of tetramethylsilane and two photon resonance three photon ionization of silicon atoms

作　　者：刘新建[1] 施德恒[2] 许启富[1] 刘玉芳[3] 

机构地区：[1]信阳教育学院物理系 [2]空军第一航空学院基础部,信阳464000 [3]河南师范大学物理系,新乡453002

出　　处：《激光杂志》2000年第5期16-18,共3页Laser Journal

摘　　要：在 410～ 40 4nm的紫激光作用下 ,利用平行板电极装置研究了Si(CH3) 4的多光子解离 (MPD)及Si原子的双光子共振三光子电离。观察到了Si(CH3) 4分子经MPD产生的、处于 33PJ″(J″ =0 ,1,2 )态的硅原子 ,依据 43PJ′← 33PJ″(J′、J″=0 ,1,2 )跃迁谱线的强度 ,得到了Si(CH3) 4经MPD产生的、处于 33PJ″(J″=0 ,1,2 )态的硅原子的密度分布值 ,并进行了理论计算 ,依据双光子跃迁的选择定则及其附加定则 ,对 410～ 40 4nm内的跃迁谱峰作了归属。根据这些结果 ,讨论了Si(CH3) 4的MPI机理 ,得到了在这一波段内 ,于本文的实验条件下 ,Si(CH3) 4的MPI机理主要为B类光化学行为的结论。Multiphoton dissociation (MPD) of tetramethylsilane and two photon resonance three photon ionization of silicon atoms are studied with parallel plate vacuum cell at violet laser radiation in the wavelength range 410～404nm.The silicon(3→｜ 3P″ J) J″ (J″=0,1,2)atoms produced due to MPD of tetramethylsilane are observed.According to the line intensities for the 4→｜ 3P J′ ←3→｜ 3P J″ (PJ″=0,1,2) transitions,the population distributions of the Si(3 3P J″ )(J″=0,1,2)states produced due to MPD of tetramethylsilane are determined and calculated theorically.According to the selection rules and its additional selection rules for two photon dipole transitions in atoms,transitions in the wavelength range 410～404nm are labelled.According to these results,multiphoton ionization(MPI) mechanism of teiramethylsilane is discussed.The conclusion is drawn that the tetramethylsilane are mainly class B photochemical behavior in the wavelength range 410～404nm.

关 键 词：多光子解离 双光子共振三光子电离 硅原子 MPD 

分 类 号：TN201[电子电信—物理电子学]