电流密度对直流电解沉积纳米孪晶Cu微观结构的影响  

MICROSTRUCTURE DEPENDENCE OF DIRECT-CURRENT ELECTRODEPOSITED BULK Cu WITH PREFERENTIALLY ORIENTED NANOTWINS ON THE CURRENT DENSITIES

作　　者：金帅[1] 潘庆松[1] 卢磊[1] 

机构地区：[1]中国科学院金属研究所沈阳材料科学国家(联合)实验室,沈阳110016

出　　处：《金属学报》2013年第5期635-640,共6页Acta Metallurgica Sinica

基　　金：国家自然科学基金项目50890171和51071153;国家重点基础研究发展计划项目2012CB932202资助~~

摘　　要：采用直流电解沉积技术,制备出具有高密度择优取向的纳米孪晶结构块体Cu样品.样品由微米级柱状晶粒构成,晶粒内有高密度的平行于生长基面的共格孪晶界面.研究发现,电流密度对于纳米孪晶Cu的晶粒尺寸有明显影响,但对其织构和孪晶片层厚度影响不大.当电流密度从10 mA/cm^2增加到30 mA/cm^2,纳米孪晶Cu的平均晶粒尺寸从10.1μm减小到4.2um,孪晶片层厚度为30-50 nm.其原因是随电流密度的增加,阴极的过电位增大,从而使晶粒细化.Bulk Cu with preferentially oriented nanoscale twins was synthesized by means of direct-current electrodepositon. The nanotwinned Cu sample is composed of columnar grains with high density nanoscale coherent twin boundaries, most of which are parallel to the growth plane. It was found that the current densities play an important role on the grain size of the nanotwinned Cu samples, however, a non-obvious effect was found on the twin lamellar thickness. With increasing the current densities from 10 mA/cm^2 to 30 mA/cm^2, the average grain size of the bulk nanotwinned Cu samples was decreased from about 10.1 μm to 4.2 μm. While the twin lamellar thickness was unchanged obviously and in the range of 30-50 nm. This is because that with the increase of current density, the overpotential of cathode increases and the grain refinement occurs.

关 键 词：CU 直流电解沉积 电流密度 纳米孪晶 晶粒尺寸 

分 类 号：TG146[一般工业技术—材料科学与工程]