仿真研究NPT-IGBT器件的瞬态特性  

Simulation Research on Transient Characteristics of NPT-IGBT

作　　者：刘钺杨 金锐 赵哿 于坤山 

机构地区：[1]国网智能电网研究院,北京100192

出　　处：《半导体技术》2013年第5期347-351,共5页Semiconductor Technology

基　　金：北京市科委科技资助项目(Z111104056011004);国家电网公司科技项目(SGRI-WD-91-12-001)

摘　　要：绝缘栅双极晶体管(IGBT)具有驱动简单、易于并联的优点,在高端领域得到广泛应用。以1 200 V非穿通型IGBT(NPT-IGBT)为例,仿真研究IGBT的器件结构对瞬态特性的影响(主要是开关特性和短路特性),并探讨器件短路工作过程中的自升温效应。另外,在保证导通沟道长度不变的前提下,研究pin区与MOS区所占元胞尺寸比例k对IGBT通态电压与关断损耗折衷关系的影响,以及采用自对准工艺进行元胞设计对器件短路特性的影响。研究发现:合理设计氧化隔离层的尺寸能明显提高IGBT的抗短路能力,从而提高器件坚固性;比例系数k越大,通态损耗越低,而开关损耗越高,设计时需综合考虑通态电压和关断损耗的折衷。适当选取k值能完成最优化的器件设计。Due to its advantages of simply driving and easy to parallel, the insulated gate bipolar transistor （IGBT） is widely used in the high-end field. 1 200 V non-punchthrough IGBT （NPT-IGBT） was set as the simulation, its transient characteristics （especifically the switching characteristics and short-circuit characteristics） and the self-heating effects of short-circuit were researched. Moreover, under the fixed length of conduction channel, the proportion of pin region and MOS region in cell （k） was discussed to reveal its effect on the trade-off of saturation voltage and turn-off loss. The influence on short-circuit characteristics caused by self-aligned process was also studyed. The results show that rational spacer dimensions can significantly improve the short circuit ability of IGBT, then the robustness of devices is enhanced. The greater the proportional coefficient k, the lower the on-state losses, and the higher the switching loss. The compromise of the saturation voltage and turn-off loss need to be synthetically considered. The optimization of the device design can be achieved when the value of k is reasonable.

关 键 词：绝缘栅双极晶体管 氧化隔离层 开关损耗 短路耐量 折衷设计 

分 类 号：TN386[电子电信—物理电子学]