976nm非对称波导结构高效率半导体激光器  

High Efficiency Semiconductor Lasers with 976 nm Asymmetrical Waveguide Structures

作　　者：林琳[1] 陈宏泰[1] 徐会武[1] 车相辉[1] 王晶[1] 位永平[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2013年第5期281-285,297,共6页Micronanoelectronic Technology

摘　　要：对976 nm激光器的三种非对称波导结构,即非对称直波导结构、非对称渐变波导结构和非对称梯形波导结构进行了基模光场和折射率分布的模拟,通过与对称波导结构的模拟结果进行对比,得到非对称直波导结构和非对称梯形波导结构的量子阱限制因子ΓQW较小,这样在相同量子阱厚度dQW下,dQW/ΓQW的值较大,可获得较大的光点尺寸,改善出光功率。将四种结构制作成2 mm腔长的1 cm巴条,在25℃室温连续测试和110 A的条件下,其中以非对称直波导结构电压最低为1.45 V,电光转换效率最高达到70%。对非对称直波导结构、非对称渐变波导结构和对称渐变波导结构进行内部参数提取,结果表明内量子效率基本一致,内损耗均小于1 cm-1。Three kinds of asymmetrical waveguide structures for the 976 nm laser, such as asym- metrical straight waveguide, asymmetrical gradual change waveguide and asymmetrical trapezi- form waveguide, were simulated on the fundamental optical mode profile and refractive index dis- tribution. Compared with the simulated results of the symmetrical waveguide, the result shows that the quantum well confinement factors/＇Qw of the asymmetrical straight waveguide and asym- metrical trapeziform waveguide are less. Under the same quantum well thickness dQw, the value of dQw/I＂Qw is greater. Then the larger light spot size was obtained, and the output light power was improved. With four structures as 1 cm bar with 2 mm cavity length, the minimum voltage of the asymmetrical straight waveguide structure is 1.45 V and the maximum electro-optical conversion efficiency reaches 70M at 110 A and 25 ~C room temperature continue test. The interior parameters were extracted from the asymmetrical straight waveguide, asymmetrical gradual change waveguide and symmetrical gradual change waveguide structures. The results show that the inner quantum effieiencies are roughly identical and the inner losses are all less than 1 cm-1.

关 键 词：非对称波导 高效率 976nm 半导体激光器 金属有机化学气相沉积(MOCVD) 

分 类 号：TN248.4[电子电信—物理电子学]