预制层中In/Cu原子比对CuInSe_2薄膜成分、结构和形貌的影响  

Influences of In/Cu atom ratio in precursor layer on composition,structure and morphologies of CuInSe_2 films

作　　者：颜志强[1] 魏爱香[1] 招瑜[1] 刘军[1] 赵湘辉[1] 

机构地区：[1]广东工业大学材料与能源学院,广东广州510006

出　　处：《可再生能源》2013年第5期9-12,17,共5页Renewable Energy Resources

基　　金：广州市科技项目(12C52111614);广东省省部产学研项目(2011A090200003)

摘　　要：采用磁控溅射技术,共溅射CuIn合金靶和纯In靶,CuIn合金靶的溅射功率不变,通过改变纯In靶的溅射功率,制备了具有不同In/Cu原子比的CuIn预制层;然后以固态硒粉为硒源,采用三步升温硒化方式对CuIn预制层进行硒化。通过EDS、XRD和SEM分析方法,研究了预制层中不同的In/Cu原子比对铜铟硒(CIS)薄膜的成分、结构和形貌的影响。结果表明:CIS薄膜主要由CuInSe2相构成,但存在少量的CuSe相,随着CuIn预制层中In/Cu原子比的逐渐增大,CuSe相所占比例减少,CIS薄膜中In/Cu和Se/(Cu+In)的比值也相应增大,CuInSe2大颗粒分布逐渐均匀,大颗粒之间的细小颗粒逐渐消失。The precursor layer with different In/Cu atom ratio were prepared by co-sputtering of CuIn alloy target and pure In target, then selenized by using Se powder as the Se source to form CuInSe/thin films. The CulnSe2 thin films were analyzed by SEM, EDS and XRD. The results reveal that the main phase of thin films is CuInSe2, and the CuSe phase also is detected in the XRD patterns. However, as the increase of In/Cu atom ratio in precursor layer, the CuSe phase ratio decreased but the Se/（Cu＋In） atom ratio and In/Cu atom ratio of CIS thin film increase accordingly. The large particles of CIS thin films are more uniform and small particles between the big particles disappeared gradually.

关 键 词：CuInSe2薄膜 磁控溅射技术 预制层 表面形貌 结构和成分 

分 类 号：TM615[电气工程—电力系统及自动化] TM914.4