新型高压大功率IPM模块的封装与驱动技术  

The packaging and driving technology of the new type high-voltage high-power IPM modules

作　　者：郑松[1] 高勇[1,2] 杨媛[2] 

机构地区：[1]西安工程大学电子信息学院,陕西西安710048 [2]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安工程大学学报》2013年第2期185-192,共8页Journal of Xi’an Polytechnic University

基　　金：西安市科技计划资助项目(CXY1129(5));2012年产业技术创新计划技术转移促进工程(CX12159)

摘　　要：随着电压与电流密度的不断增加,对IPM模块封装的稳定性与驱动电路的可靠性提出了更高的要求.本文以赛米控(Semikron)公司采用SKiiPR○技术的SKiiP3/4系列IPM为基础,分析了在新型高压大功率IPM封装中为了提高模块热稳定性与温度循环能力所采用的无底板技术、芯片烧结技术、压接技术.论述了大功率IPM中IGBT对栅极驱动电路和各保护机制的要求.针对信号隔离脉冲变压器易磁饱和的特性,运用脉冲调制的办法,使驱动信号可以在较宽占空比范围内通过脉冲变压器传递.设计了为栅极驱动电路提供足够驱动功率的DC/DC全桥变换器.With the voltage and the current density increasing,higher requirements on the stability of the IPM modules and the reliability of the driving circuit is put forward. According to SKiiP3/4 IPM based on SKiiP technology from Semikron, the base-plate-free technology, sinter technology, and pressure technology of the new high power IPM module are introduced in order to improve the stability and the temperature cycling ability. The requirements of the gate driving circuit and the protection mechanism of IGBT in high power IPM are discussed. Aiming at the easy magnetic saturation characteristic of the pulse transformer,the driving signal can be transmitted in a wide range of duty cycle through the pulse transformer using the pulse modulation technology. A full bridge converter is designed,it can provide sufficient driving power for the gate driving circuit.

关 键 词：智能功率模块 IGBT 无底板 烧结 驱动 

分 类 号：TM92[电气工程—电力电子与电力传动]