工作在亚阈区之纯MOS管电压基准的设计  

Design of pure-MOS voltage reference at subthreshold

作　　者：魏全[1] 傅兴华[1] 王元发[1] 

机构地区：[1]贵州大学贵州省微纳电子与软件技术重点实验室,贵州贵阳550025

出　　处：《西安工程大学学报》2013年第2期203-206,共4页Journal of Xi’an Polytechnic University

基　　金：贵州大学研究生创新基金资助项目(理工2012018)

摘　　要：采用工作在亚阈值区的NMOS和源极耦合对的组合设计一种无三极管、无大电阻、无运放的,工作在亚阈区的纯MOS电压基准源.利用CSMC(华润上华)0.5μm BiCMOS工艺,采用Cadence spice软件仿真.测试结果显示,输出基准电压为1.520V,电路功耗仅200nA,在温度范围(-20℃～100℃)内的温度系数为31.30ppm/℃.A pure-MOS voltage reference circuit without BJT and big resistors and amplifier working at subthreshold is designed by using NMOS and source coupled pairs transistors operating in subthreshold region. The circuit was simulated in cadence spectre software in a standard 0. 5μm CSMC CMOS process. The output voltage and power dissipation are 1. 520V and 200nA respectively, temperature coefficienee is about 31.30μpm℃ ranging from --20℃ to 100℃.

关 键 词：纯MOS管 电压基准 亚阈值区 源耦合对 温度系数 

分 类 号：TN433.01[电子电信—微电子学与固体电子学]