基于衬底偏置的超低耗电流复用混频器  

Ultra-low power bulk-biased mixer with current-reuse

作　　者：申晶[1] 张晓林[1] 

机构地区：[1]北京航空航天大学电子信息工程学院,北京100191

出　　处：《北京航空航天大学学报》2013年第4期531-534,共4页Journal of Beijing University of Aeronautics and Astronautics

基　　金：国防科工委民用航天专项资助项目;北京市重点学科基金资助项目(XK100070525)

摘　　要：基于SMIC 0.18μm 1P6M CMOS工艺,设计实现了一种工作在0.6 V超低电源电压下的混频器.该混频器跨导级采用自偏置的互补跨导结构,并与开关级构成折叠结构,大大降低了电源电压;电路中所有的MOS管衬底均加有固定偏置电压,减小了MOS管的阈值电压,实现了超低电压超低功耗的设计;并采用电流复用技术,改善了电路的噪声性能,并提高了其转换增益和线性度.该混频器核心电路尺寸为460μm×400μm,当射频信号、本振信号和中频信号分别为1575 MHz,1400 MHz和175 MHz时,仿真表明,该混频器转换增益(Gc)为6.1 dB,双边带噪声系数为14 dB,输入1 dB压缩点为-16.67 dBm,在0.6 V的电源电压条件下,功耗仅为0.76 mW,可用于航空航天领域的电子系统中.Using the approaches of folded switching stage and self-biased transconductance stage, a mixer operating at supply voltage down to 0.6V was designed. The bulk-biased topology was used to achieve ultra- low supply voltage and ultra-low power consumption while the current-reuse technique was selected to increase gain, linearity and noise performance. Implemented in a SMIC 0. 18μm CMOS process, the mixer core has an area of 460μm×400μm. When the frequency of the radio frequency （RF） signal, local oscillator （LO） signal and the intermediate frequency （IF） signal are 1 575 MHz, 1400 MHz and 175 MHz, respectively,the simula- tion results show that the mixer features a conversion gain of 6. ldB, a dual sideband （DSB） noise figure of 14 dB, a 1 dB compression point of -16.67 dBm, and consumes only 0.76 mW.

关 键 词：CMOS集成电路 射频接收机 混频器 衬底偏置 超低耗 电流复用 折 叠 自偏置 

分 类 号：TN432[电子电信—微电子学与固体电子学]