分数维方法研究GaAs薄膜中的极化子  

Polaron effect in a GaAs film: the fraction-dimensional space approach

作　　者：武振华[1] 李华[2] 严亮星[1] 刘炳灿[2] 田强[1] 

机构地区：[1]北京师范大学物理系,北京100875 [2]装甲兵工程学院基础部,北京100072

出　　处：《物理学报》2013年第9期390-394,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10574011;10974017)资助的课题~~

摘　　要：本文采用分数维方法,在讨论Al0.3Ga0.7As衬底上GaAs薄膜的分数维基础上,计算了GaAs薄膜中的极化子结合能和有效质量.随着薄膜厚度的增加,极化子结合能和质量变化单调地减小.当薄膜厚度Lw<70A并且衬底厚度Lb<200A时,衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著,随着衬底厚度的增加,薄膜中极化子的结合能和质量变化逐渐变大;当薄膜厚度Lw>70A或者衬底厚度Lb>200A时,衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著.研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考.Within the framework of the fraction-dimensional space approach, the binding energy and the effective mass of a polaron confined in a GaAs film deposited on Al 0.3 Ga 0.7 As substrate have been investigated. It is shown that the polaron binding energy and mass shift decrease monotonously with increasing film thickness. For the film thickness of L w ＆lt; 70 A and the substrate thickness of L b ＆lt; 200 A, the substrate thickness will influence the polaron binding energy and mass shift. The polaron binding energy and mass shift increase with increasing substrate thickness. In the region L w ＆gt; 70 A or L b ＆gt; 200 A, the substrate thickness has no influence on the polaron binding energy and mass shift.

关 键 词：分数维方法 GaAs薄膜 极化子 低维异质结构 

分 类 号：O484.1[理学—固体物理]