Ni—P—SiC化学复合镀层中SiC均匀共析的最佳参数研究  

Study of Optimum Parameters of SiC even Eutectoid in Ni-P-SiC Chemical Composite Plating

作　　者：吴永敏[1] 梅建庭[2] 

机构地区：[1]大连铁道学院应用化学系 [2]大连舰艇学院

出　　处：《大连铁道学院学报》1991年第4期37-40,共4页Journal of Dalian Railway Institute

摘　　要：研究了镀复条件及工艺配方对 N-P-SiC 化学复合镀层中 SiC 均匀共析的影响.结果表明,Nj-P 合金基体中 SiC 微粒子均匀共析的最佳条件是:温度87±1℃,搅拌速度600r/min·K,pH=4.8,SiC 平均粒径 D_p=3.5μm,SiC 的添加量8g/L,析出速度12～14μm/h.本文还测定了镀层的显微硬度及磨损量,并用扫描电镜观察了磨损前后的表面形貌和结构.Stiles the effects of deposited condition and technological prescriptions on the rate of Ni-P-SiC chemical composite plating in SiC concentration in deposite coating.The results show that,the best reaction cordition of the chemical plating and its factors which affect the properties of the composite coating are obtained.The optimum conditions are as follows:temperatures 87±1℃,rotational speed 600(r.min^(-1).K^(-1)),pH=4.8, mean diameter of SiC 3.5μm,the amount of additive 8g.L^(-1)and the deposition rate 12～14μm·h^(-1)·The microhardness and the mass loss of the coating are measured,meanwhile,the outline and the structure of wearcd surface have been observed by using of a scan electron microscope.

关 键 词：化学镀 均匀性 共析温度 复合镀层 

分 类 号：TQ153.2[化学工程—电化学工业]