FeZrBNb单层膜的巨磁阻抗效应  

Giant Magneto-impedance (GMI) Effects of FeZrBNi Single Layered Films

作　　者：袁慧敏[1] 王文静[1] 

机构地区：[1]齐鲁师范学院物理系

出　　处：《电子技术（上海）》2013年第4期18-20,共3页Electronic Technology

摘　　要：用高频溅射法制备了FeZrBNb合金薄膜,研究了制备条件、制备工艺对薄膜样品巨磁阻抗效应的影响。结果表明,增大薄膜的厚度可以提高样品的阻抗比,13MHz下,厚度为10.8μm的薄膜样品的最大纵向阻抗比为2.5%;在制备过程中加磁场可以在薄膜中感生出磁各向异性场,进而提高薄膜的阻抗比。同时,退火可以提高材料的软磁特性,增强薄膜的巨磁阻抗效应,对薄膜进行退火处理后,薄膜的纵向和横向阻抗比分别提高到1.7%和1.5%。The FeZrBNb soft magnetic alloy films are deposited by radio frequency sputtering on the substrate of single crystal Si. The influence of preparation method and annealing process on the giant magneto-impedance （GMI） effect are studied. The results show that the increase of the film thickness can significantly improve the GMI ratio. Adding magnetic field in the preparation process can induce magnetic anisotropy in the films, so that improving the soft magnetic properties of the material, and increasing the GMI ratio of the films. Both natural and magnetic field annealing can obtain larger GMI ratio, the maximum GMI ratios of magnetic field annealed films are 2.6% and 1.7% for longitudinal and transverse cases, respectively.

关 键 词：巨磁阻抗效应 感生各向异性 薄膜 退火 

分 类 号：O484.43[理学—固体物理]