用于医学成像的碲锌镉单极型探测器研究进展  

Progresses in the Development of CdZnTe Unipolar Sensing Detector For Medical Imaging

作　　者：张秋实[1] 卢闫晔[1] 谢肇恒[1] 杨昆[2] 任秋实[1] 

机构地区：[1]北京大学生物医学工程系,北京100871 [2]河北大学测控系,河北保定071000

出　　处：《半导体光电》2013年第2期171-179,共9页Semiconductor Optoelectronics

基　　金：国家重大仪器专项项目(2011YQ030114);国家"973"计划项目(2011CB707500)

摘　　要：碲锌镉(CdZnTe)半导体材料具有探测效率高、能量分辨率高和体积小重量轻的特点,是公认的最有希望成为下一代伽马射线探测装置的材料。然而,空穴俘获导致的电荷收集不完全限制了碲锌镉半导体探测器的性能。解决空穴俘获最有效的方法是单极型探测器技术。文章首先简要介绍半导体探测器中电荷收集的相关理论,然后重点阐述单极型探测器技术的实现方法,包括各种电极的结构设计原理、典型的探测器原型机介绍、性能特点及其结构设计的优缺点。最后简要展望了碲锌镉半导体探测器未来的发展方向。The CdZnTe semiconductor is now regarded as the most promising candidate for the next generation of gamma ray detectors, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of CdZnTe detector is limited mainly by incomplete charge collection problem resulted from hole trapping. Single charge sensing technique is the most effective way for solving the trapping problem with some electronic correction methods. Firstly, the methods and techniques for improving the performance summarized covering the of CdZnT in detail. principles e detectors were reviewed. Then the single charge sensing techniques were CdZnTe detectors of different geometries were discussed particularly, of the electrode geometry design, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, future deve of CdZnTe detector is also discussed.

关 键 词：碲锌镉 空穴俘获 权重电势 电极设计 

分 类 号：TL814[核科学技术—核技术及应用]