Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol-gel method  

作　　者：M. Hassan Farooq Hai-Ling Yang Xiao-Guang Xu Cong-Jun Ran Jun Miao M. Yasir Rafique Li-Qing Pan Yong Jiang 

机构地区：[1]State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering,University of Science and Technology Beijing [2]Department of Physics,School of Applied Science,University of Science and Technology Beijing

出　　处：《Rare Metals》2013年第2期165-168,共4页稀有金属（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.50831002,51271020,51071022,and11174031);Program for Changjiang Scholars and Innovative Research Team in University(PCSIRT)(No.IRT1106);Beijing Nova Program(No.2011031);Beijing Municipal Natural Science Foundation(No.2102032);the Fundamental Research Funds for the Central Universities

摘　　要：Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrate by using sol-gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films show room temperature ferromagnetism （RTFM） and reach the maximum saturation magnetization value of 1.54 kA.m at 3 % Si concentration. RTFM of Si-doped ZnO decreases with the increasing annealing temperature because of the formation of SiO2. Photoluminescence measurements suggest that the RTFM in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies Vzn and oxygen interstitials O1.Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrate by using sol-gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films show room temperature ferromagnetism （RTFM） and reach the maximum saturation magnetization value of 1.54 kA.m at 3 % Si concentration. RTFM of Si-doped ZnO decreases with the increasing annealing temperature because of the formation of SiO2. Photoluminescence measurements suggest that the RTFM in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies Vzn and oxygen interstitials O1.

关 键 词：ZNO Dilute magnetic semiconductor DOPING 

分 类 号：TB43[一般工业技术]