Ni掺杂对金属V抗毒化性能的影响  

Influence of Ni Doping on Anti-poison Properties of Vanadium

作　　者：余铭铭[1] 陈绍华[1] 李海容[1] 彭述明[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所

出　　处：《原子能科学技术》2013年第4期648-651,共4页Atomic Energy Science and Technology

摘　　要：采用磁悬浮感应熔炼法制备VNi0.01合金,完全活化后,在含0.5%CO2的1.0 MPa毒化气氛中进行吸氘反应。在反应初期VNi0.01合金与纯V相比,仍保持较快的吸氘速率,随后合金吸氘速率迅速下降直至为零。样品毒化后经加热除气处理,样品室内再次充入1.0 MPa高纯氘气,VNi0.01合金吸氘速率已恢复至完全活化时的水平,而纯V的吸氘速率则低于初次活化时的吸氘速率。合金经活化后测得其增压性能在300～400K范围内均优于纯V,因而合金有望用于增压化学床。这些研究结果将为该材料的应用提供直接依据。The VNi0.01 alloy was fabricated by induction melting. The VNi0.01 alloy and pure vanadium were poisoned by 0.5%CO2 in deuterium （1.0 MPa） after activation. The deuterium absorption rate of VNi0.01 alloy was faster than that of pure vanadium in the early stage, though it rapidly decreased to zero. After removing the gas by heating and vacuumizing, the pure deuterium was resent to sample chamber with final pressure at 1.0 MPa. The ability of deuterium absorption of VNi0.01 alloy was regenerated as it was fully activated, but the absorption rate of pure vanadium was lower than it was first activated. Besides, the pressure boost property of VNi0.01 alloy was superior to pure vanadium in the temperature range of 300-400 K. It is expected that VNi0.01 alloy could be used in pressure boost chemical bed. The results of these studies will provide a direct basis for application of the material.

关 键 词：感应熔炼 活化 毒化 吸氘速率 V VNi0 01合金 

分 类 号：TG146.413[一般工业技术—材料科学与工程]