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作 者:SHI ZiTao WANG Albert CHENG YuHua
机构地区:[1]Shanghai Research Institute of Microelectronics,Peking University [2]School of Information Science and Technology,Peking University [3]Department of Electrical and Computer Engineering,University of California
出 处:《Science China(Information Sciences)》2013年第6期124-132,共9页中国科学(信息科学)(英文版)
基 金:supported by Research Program of Science and Technology Commission of Shanghai (Grant No.11110707100)
摘 要:Electrostatic discharge(ESD) failure has become an emerging challenge for radio frequency(RF) integrated circuits(ICs),which requires high ESD-protection for circuit applications in harsh environment.This paper discusses the design and optimization of an ultra-wideband(UWB) correlator circuit using ESDaware simulation design technique.Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction.The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique.The design is based on a commercial 0.18 μm RFCMOS technology.Electrostatic discharge(ESD) failure has become an emerging challenge for radio frequency(RF) integrated circuits(ICs),which requires high ESD-protection for circuit applications in harsh environment.This paper discusses the design and optimization of an ultra-wideband(UWB) correlator circuit using ESDaware simulation design technique.Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction.The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique.The design is based on a commercial 0.18 μm RFCMOS technology.
关 键 词:ULTRA-WIDEBAND CORRELATOR electrostatic discharge(ESD) radio frequency(RF) integrated circuit(IC) ESD-aware design optimization
分 类 号:TN925[电子电信—通信与信息系统]
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