An optimized UWB correlator design with the consideration of the impacts from the ESD protection devices  

An optimized UWB correlator design with the consideration of the impacts from the ESD protection devices

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作  者:SHI ZiTao WANG Albert CHENG YuHua 

机构地区:[1]Shanghai Research Institute of Microelectronics,Peking University [2]School of Information Science and Technology,Peking University [3]Department of Electrical and Computer Engineering,University of California

出  处:《Science China(Information Sciences)》2013年第6期124-132,共9页中国科学(信息科学)(英文版)

基  金:supported by Research Program of Science and Technology Commission of Shanghai (Grant No.11110707100)

摘  要:Electrostatic discharge(ESD) failure has become an emerging challenge for radio frequency(RF) integrated circuits(ICs),which requires high ESD-protection for circuit applications in harsh environment.This paper discusses the design and optimization of an ultra-wideband(UWB) correlator circuit using ESDaware simulation design technique.Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction.The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique.The design is based on a commercial 0.18 μm RFCMOS technology.Electrostatic discharge(ESD) failure has become an emerging challenge for radio frequency(RF) integrated circuits(ICs),which requires high ESD-protection for circuit applications in harsh environment.This paper discusses the design and optimization of an ultra-wideband(UWB) correlator circuit using ESDaware simulation design technique.Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction.The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique.The design is based on a commercial 0.18 μm RFCMOS technology.

关 键 词:ULTRA-WIDEBAND CORRELATOR electrostatic discharge(ESD) radio frequency(RF) integrated circuit(IC) ESD-aware design optimization 

分 类 号:TN925[电子电信—通信与信息系统]

 

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