掺杂方式对Mg:Ba_(0.3)Sr_(0.7)Zr_(0.18)Ti_(0.82)O_3陶瓷微结构及性能的影响  

The effects of doping method on the microstructure and electric property of Mg:Ba_(0.3)Sr_(0.7)Zr_(0.18)Ti_(0.82)O_3 ceramics

作　　者：孙晓剑[1] 樊明雷[1] 张小山[1] 曾静[1] 余萍[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《湖北大学学报（自然科学版）》2013年第2期176-179,共4页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金云南联合基金(u0837605)资助

摘　　要：采用溶胶-凝胶法制备Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷粉末,以传统陶瓷制备工艺制备Mg元素掺杂的Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷.研究MgO掺杂量为1.6%(质量分数)时,MgO固相掺杂和Mg2+湿化学法掺杂两种不同的掺杂方式对Mg掺杂的Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷显微结构及电学性能的影响.研究结果表明,当Mg掺杂量相同时,掺杂方式对Mg掺杂的Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷的显微结构和电学特性有显著的影响,相比纯的Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷,两种掺杂方式中,Mg2+湿化学法掺杂相对于MgO固相掺杂,在BSZT陶瓷中的分布更均匀,替位程度更高,所以其对介电常数的影响也相对更大.而MgO固相掺杂相对于Mg2+湿化学法掺杂明显地促进了陶瓷晶粒的生长,提高了陶瓷的致密性,同时其击穿电场和电阻率也有较大提高.1 350℃下烧结的固相MgO掺杂的Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷性能较优,介电常数约为590,介电损耗低于0.000 5,电阻率为7.78×1013Ω.mm,击穿场强为6.56kV/mm.Mg：Ba0.3Sr0.7Zr0.18Ti0.82O3（BSZT） powder was synthesized by sol-gel processing and Mg：Ba0.3Sr0.7Zr0.18Ti0.82O3 ceramics with 1. 6 % （wt.） MgO doped were prepared by ceramic fabrication traditional technology. The effects of doping method on the characteristics of the microstructure and electric properties of Mg：Ba0.3Sr0.7Zr0.18Ti0.82O3 ceramics were investigated experimentally. The Mg element was introduced into the powder by mixing with solid state MgO and by sol-gel processing with Mg2＋, respectively. The results revealed that doping method played an important role in the microstructure and electric properties of Mg：Ba0.3Sr0.7Zr0.18Ti0.82O3 ceramics. Compared with pure Ba0.3Sr0.7Zr0.18Ti0.82O3 ceramics, Mg2＋ aid distributed more evenly and substituted highlier in the BSZT ceramics than MgO aid, so it had a great impact on the dielectric constant of ceramics. Moreover, compared to Mg2＋ aid, MgO aid was beneficial to improve the density of the ceramics and the resistivity and breakdown strength were also enhanced. The Mg：Ba0.3Sr0.7Zr0.18Ti0.82O3 ceramics doped MgO,sintered at 1 350 ℃, possessed the best electric properties：ε≈590 at 110 MHz, tarδ≈0. 000 5,p≈7.78×10^13Ω·mm,E≈6. 56 kV/mm.

关 键 词：Ba0.3Sr0.7Zr0.18Ti0.82O3陶瓷 MgO掺杂 Mg2+掺杂 介电性能 

分 类 号：TB324.1[一般工业技术—材料科学与工程]